SRINAGAR: Dr. Sheikh Aamir Ahsan, a faculty member at the Department of Electronics and Communication Engineering, National Institute of Technology (NIT Srinagar) delivered an invited talk at the prestigious IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2024, held in Bangalore.
The 3-day conference IEEE-EDTM 2024 was held at Hilton Bangalore from the 3-6th of March 2024.
Dr. Ahsan’s talk, titled “Advancements in GaN Modeling for Power and RF Applications: Insights from the ASM Model and Beyond,” garnered significant attention from GaN technology enthusiasts, academics, and industry professionals alike who are working towards the adoption of GaN in energy efficiency.
In his message, Director NIT Srinagar, Prof. A. Ravinder Nath congratulated the faculty member, Dr. Ahsan, for his commendable contribution at the IEEE Electron Devices Technology and Manufacturing Conference 2024 in Bangalore.
He said attending such conferences serves as invaluable platforms for faculty members, researchers, and industry experts to converge, share their latest findings, and engage in meaningful discussions.
Institute’s Registrar, Prof. Atikur Rahman said these conferences not only provide a platform for academic and research dissemination but also play a crucial role in fostering personal and professional growth.
HOD, Electronics & Communication Engineering Dr.Gausia Qazi commended Dr. Ahsan on behalf of the entire department for representing the institute and the department at such a prestigious forum. She said such conferences play a crucial role in personal and professional growth, contributing significantly to one’s career development.
Meanwhile, Dr. Ahsan’s presentation explored recent developments in Gallium Nitride (GaN) device models and design frameworks, focusing on their implications for power electronics and RF applications.
A highlight of the talk was the discussion on the Advanced SPICE Model (ASM) for GaN High-Electron-Mobility Transistors (HEMTs), renowned for its accuracy and fidelity and used by GaN product developers globally.
Dr. Ahsan also presented novel advancements in e-mode p-GaN and p-channel GaN device models, led by his PhD student, Zarak Bhat, addressing key challenges and paving the way for enhanced device performance and reliability.
His presentation showcased NIT Srinagar’s commitment to cutting-edge research and innovation in semiconductor technology.
The conference, heavily attended by semiconductor researchers from the United States, Europe, and Asia, featured prominent figures such as Prof. Chenming Hu (UC Berkeley), Prof. Ramgopal Rao (Vice Chancellor, BITS Pilani), Prof. Navakant Bhat (IISc Bangalore), Prof. Sayeef Salahuddin (Editor in Chief, IEEE Electron Device Letters), Prof. Patrick Fay (Editor in Chief, IEEE Transactions on Electron Devices) among others.
Industry leaders from Intel, Micron, Texas Instruments, Keysight, Applied Materials, and other leading companies also participated. A key highlight of the event was the presentation of the Lifetime Achievement Award to Prof. Juzer Vasi for his monumental contributions in laying the foundations of research in Microelectronics in India decades ago.
Previously, Dr. Ahsan had presented his research paper on 2D Material FET sensors (NITSRI-2D) at the IEEE European Solid-state Device Research Conference (ESSDERC) at Lisbon, in September 2023, which was the only paper at ESSDERC from an Indian-affiliated institute.

KR Desk